International research may help come by improved memory devices
The scientists believe that their theoretical conclusions may lead to the development and practical use of the next generation of memory devices
Nov 17, 2015
A Russo-American team of physicists has predicted the existence of the so-called ‘memory effect’ in the single-electron transistors. The scientists believe that their theoretical conclusions may lead to the development and practical use of the next generation of memory devices, portal Nplus1.ru reported.
The results of their modeling work have been published in Physical Review B.
The single-electron transistors (SET) are switching devices that enable noticeable voltage fluctuations through manipulations with single electrons.
To address the deficiencies of the memory devices we all use today, many research groups look into new physical principles, on which to build new devices. The authors of this recent research paper feel their work could lay the foundation for brand new SET-based memory models.
The results of their modeling work have been published in Physical Review B.
The single-electron transistors (SET) are switching devices that enable noticeable voltage fluctuations through manipulations with single electrons.
To address the deficiencies of the memory devices we all use today, many research groups look into new physical principles, on which to build new devices. The authors of this recent research paper feel their work could lay the foundation for brand new SET-based memory models.